掺硅类金刚石膜的制备与力学性能研究

用脉冲电弧离子镀技术，通过调整掺硅石墨靶和纯石墨靶的数量，制备了一系列不同硅含量的类金刚石薄膜样品.研究发现：当硅含量达6.7at.%时，类金刚石薄膜的应力从4.5GPa降低到3.1GPa，薄膜的硬度还保持在3600Hv，和没有掺杂的类金刚石薄膜的硬度相比，基本保持不变；当硅含量小于6.7at.％时薄膜的摩擦系数相对于未掺杂的类金刚石薄膜也保持不变，为0.15.当薄膜中硅含量继续增加时，薄膜中C—Si键的含量增多，导致薄膜硬度和应力都有较大幅度地减小、摩擦系数增大、磨损性能也变差了. 关键词： 类金刚石膜 掺硅 应力 硬度

Study on the mechanical properties of diamond like carbon films with Si doping

A series of samples with different Si concentration were prepared by adjusting the numbers of Si-doped graphite targets and pure graphite targets. It was found that the stress in the thin films decreased from 4.5GPa to 3.1GPa when the Si concentration reached 6.7at.%，but the hardness kept constant at about 3600Hv，almost the same as of un-doped thin films，and the friction coefficient of thin films kept constant at about 0.15. As the Si concentration in the thin film kept on increasing，the concentration of C-Si bond will increase，leading to the decrease of hardness and stress and the increase of friction coefficient.