AC conductivity of porous silicon: A fractal and surface transport mechanism?

Summary In this paper we report on the frequency dependence of the AC conductivity of porous silicon in the range 10 Hz-100 kHz. Two types of testing devices have been fabricated on three different series of samples formed electrochemically using as a starting materialptype,n ⁻-type andn ⁺-type silicon substrates. For frequencies less than 20-40 kHz the conductivity is found to follow a sublinear frequency dependence. This behaviour is typical of a carrier transport mechanism determined by an anomalous diffusion process. At higher frequencies we find that surface states influence the transport mechanism. This suggests a double-channel transport mechanism: one related to porous-silicon “volume” properties and the other more connected to the “surface” itself. Paper presented at the III INSEL (Incontro Nazionale sul Silicio Emettiore di Luce) Torino, 12–13 October 1995.