| SrBi2Ta2O9/Bi4Ti3O12复合铁电薄膜的制备与特性研究 |
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| 引用本文： | 王华,任明放. SrBi2Ta2O9/Bi4Ti3O12复合铁电薄膜的制备与特性研究[J]. 物理学报, 2007, 56(12) |
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| 作者姓名： | 王华 任明放 |
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| 摘 要： | 采用溶胶凝胶工艺在p-Si衬底上制备了SrBi2Ta2O9/Bi4Ti3O12复合铁电薄膜. 研究了SrBi2Ta2O9/Bi4Ti3O12复合薄膜的微观结构与生长行为、铁电性能和疲劳特性. 研究表明: Si衬底Bi4Ti3O12薄膜易于沿c轴择优生长,并有利于SrBi2Ta2O9/Bi4Ti3O12复合薄膜的生长.合理的SrBi2Ta2O9/Bi4Ti3O12厚度配比能获得较好的铁电性能和优良的抗疲劳特性,SrBi2Ta2O9/Bi4Ti3O12厚度配比为1∶3的复合薄膜的剩余极化强度和矫顽电场分别为8.1 μC/cm2 和 130 kV/cm,其无疲劳极化开关次数达1011以上.
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| 关 键 词： | 复合铁电薄膜 溶胶凝胶工艺 |
Preparation and characterization of SrBi2Ta2O9/Bi4Ti3O12 multiple thin films on p-Si substrate |
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| Wang Hua,Ren Ming-Fang. Preparation and characterization of SrBi2Ta2O9/Bi4Ti3O12 multiple thin films on p-Si substrate[J]. Acta Physica Sinica, 2007, 56(12) |
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| Authors: | Wang Hua Ren Ming-Fang |
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| Abstract: | |
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| Keywords: | SrBi2Ta2O9 Bi4Ti3O12 |
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