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热灯丝CVD金刚石膜硼掺杂效应研究
引用本文:廖克俊,王万录,张振刚,吴彬.热灯丝CVD金刚石膜硼掺杂效应研究[J].物理学报,1996,45(10):1771-1776.
作者姓名:廖克俊  王万录  张振刚  吴彬
作者单位:兰州大学物理系
基金项目:国家自然科学基金资助的课题.
摘    要:利用Raman谱和X射线衍射微分析研究了金刚石膜硼掺杂效应.研究发现,在硼浓度较低时,金刚石膜中非晶碳(Sp2键合)含量减少,而随着硼浓度增加,金刚石膜的Raman特征峰(Sp)向低频方向漂移,并且展宽和出现不对称.这是由于硼掺杂引起晶格变化及Fano互作用所致 关键词

关 键 词:硼掺杂  CVD  金刚石薄膜
收稿时间:8/9/1995 12:00:00 AM

STUDY OF BORON-DOPED DIAMOND FILMS BY HOT FILAMENT CVD
LIAO KE-JUN,WANG WAN-LU,ZHANG ZHEN-GANG and WU BIN.STUDY OF BORON-DOPED DIAMOND FILMS BY HOT FILAMENT CVD[J].Acta Physica Sinica,1996,45(10):1771-1776.
Authors:LIAO KE-JUN  WANG WAN-LU  ZHANG ZHEN-GANG and WU BIN
Abstract:The properties of boron-doped diamond films prepared by hot filament CVD were studied with Raman spectra and X-ray microanalysis. It was found that the content of the graphitic type (Sp2)bonding in the CVD diamond was reduced at low boron concentrations, and the widening and shift of the characteristic diamond Sp3 Raman peak appeared in the diamond with increasing boron concentrations. This can be interpreted in terms of the lattice strain and Fano interaction caused by boron doping.
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