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X-ray photoelectron spectroscopy characterization of stain-etched luminescent porous silicon films |
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| Authors: | R. Zanoni G. Righini G. Mattogno L. Schirone G. Sotgiu F. Rallo |
| Affiliation: | a Dipartimento di Chimica, Università di Roma “La Sapienza”, piazzale A. Moro, 5-Box 34, Roma 62, 00185 Roma, Italy b CNR, Area della Ricerca di Roma, P.O. 10, 00016 Monterotondo Scalo, Italy c CNR, ICMAT, P.O. 10, 00016 Monterotondo Scalo, Italy d Dipartimento di Ingegneria Elettronica, Università di Roma Tre, via della Vasca Navale, 84-00146 Roma, Italy |
| Abstract: | The surface and in-depth chemical nature of the photoluminescent stained Si layer obtained with a novel procedure based on HF/HNO3 is presented. Oxide-free porous Si surfaces result from controlled preparation, storing and handling of samples, as revealed by parallel X-ray photoelectron spectroscopy and X-ray-induced Auger electron spectroscopy measurements, coupled with Ar+ ion sputtering. The present findings support the model for the porous layer of oxidized samples of Si grains embedded in a silica gel matrix. |
| Keywords: | Silicon Porous Stain etch Photoluminescence XPS Photoelectron spectroscopy |
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