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Two Beam Coupling in Semi-Insulating GaN Film Using Electroabsorption Effect |
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| Authors: | Takeharu Innami Ryushi Fujimura Masahiro Nomura Tsutomu Shimura Kazuo Kuroda |
| Institution: | (1) Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan |
| Abstract: | The photorefractive effect was observed in He-ion-implanted semi-insulating GaN film in the UV spectral region. The photorefractive grating is induced by the electroabsorption effect near the band-edge. Two beam coupling experiments were performed at a wavelength of 363.8 nm. The experimental results indicate that absorption grating mainly contributes to the beam coupling. |
| Keywords: | photorefractive effect gallium nitride two-beam coupling electroabsorption |
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