Electron traps in wide-gap n-Hg0.3Cd0.7Te characterized by time-resolved photoconductivity

Time-resolved photoconductivity measurements have been used to characterize electron traps in wide-gap n-HgO_0.3Cd_0.7Te for the first time. The characterization was made possible by combining the time-resolved photoconductive data with the analytical method conventionally used in DLTS spectroscopy. Two electron traps were found in the band gap with 61 meV and 79 meV below the conduction band edge, their concentrations are 1.1×10¹³ cm^–3 and 5.8×10¹¹ cm^–3, respectively. Compared with DLTS spectroscopy, this characterization method markedly simplifies sample preparation and experimental procedure.