GaAs/Ge的MOCVD生长研究

用常压MOCVD在Ge衬底上外延生长了GaAs单晶层,研究了GaAs和6e的极性与非极性材料异质外延生长,获得了质量优良的GaAs/Ge外延片,GaAs外延层X射线双晶衍射回摆曲线半高宽达16弧秒.10K下PL谱半峰宽为7meV.讨论了极性与非极性外延的界面反相畴问题和GaAs-Ge界面的Ga、Ge原子互扩散问题.

INVESTIGATION OF MOCVD GROWTH OF GaAs ON Ge SUBSTRATE

GaAs epilayer on Ge substrate were obtained in a self-made atmospheric pressure MOCVD system. Growth technique of polar compound GaAs on non-polar Ge substrate have been studied.The GaAs epilayer on Ge were measured by X-ray double-crystal diffractometry,the half-width of the peak of the rocking curve of the GaAs epilayer were 16″(arcs).The half-width of the PL spectrum of GaAs at 10K is 7meV. Antiphase domain problem and diffusion problem of Ga、Ge、As atom of interface between polar epilayer GaAs and non-polar Ge substrate were also investigated.