Two-step rapid thermal annealing (TS-RTA) to suppress out-diffusionof dopants without degrading short channel effect of transistor |
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| Authors: | Jong-Wan Jung Jae-Sung Roh Youngjong Lee Kyungho Lee |
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| Institution: | Hyundai Electron. Ind. Co. Ltd., Cheongju; |
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| Abstract: | We examined the effects of source/drain annealing condition on the gate sheet resistance and short channel effect. We found that two-step rapid thermal annealing (TS-RTA) technology, where 700°C, 3 min pre-annealing in O2 is introduced before 1000°C anneal in N2, suppressed dopant out-diffusion without degrading short channel effect of transistor |
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