Structure of autoepitaxial diamond films

A reflection high energy electron diffraction (RHEED) method has been used to investigate the structural peculiarities of synthetic diamond autoepitaxial films, deposited from a gaseous phase onto natural diamond seed crystal. The diamond films on the (111) and (110) faces usually have internal stresses, which cause the (111) plane microtwinning process at thicknesses of about 1000 Å. The thickness of twin lamellas is about 0.01?1μm. On the (100) face the diamond films do not undergo twinning and have a high structural perfection.