Characterization of the interface region in VPE GaAs |
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| Authors: | A. Shibatomi N. Yokoyama H. Ishikawa K. Dazai O. Ryuzan |
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| Affiliation: | Fujitsu Laboratories Limited, 1015, Kamikodanaka, Nakahara, Kawasaki, Japan |
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| Abstract: | “Absolute” electron mobility values in the substrate interface region of n-type GaAs epitaxial layers were investigated. Space-charge scattering was found to be significant near the interface but could be minimized by the sequential growth of layers in one step. Our experimental results suggest that local deviations from stoichiometry may be responsible for the space-charge scattering. |
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