On the kinetics of nitrogen incorporation in GaP LPE layers using NH3 vapour doping |
| |
Authors: | C.J. Werkhoven R.C. Peters |
| |
Affiliation: | Philips Research Laboratories, Eindhoven, The Netherlands |
| |
Abstract: | The partial substitution of N for P in GaP has a considerable effect on the luminescence quantum efficiency of GaP epitactic layers. The incorporation of N in GaP liquid phase epitactic layers using NH3 vapour doping has been studied at different H2 partial pressures in argon gas. It is shown that the incorporation of N in different ambients is conveniently described by just one parameter. The reaction of NH3 with Ga is found to be an equilibrium process. The N concentration in the layer is directly proportional to the GaN concentration in the melt. From the correlation of the dissociation of NH3 with the formation of GaN it is concluded that the NH3 pressure, as measured in the exit gas, is not representative of the NH3 pressure at the melt. The dissociation of NH3 is found to be strongly retarded by H2 owing to adsorption of H2 on the surface of reactor materials which catalyse the dissociation. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |