A complete set of self‐consistent charge density‐functional tight‐binding parametrization of zinc chalcogenides (ZnX; X=O,S, Se,and Te)

We have developed a complete set of self‐consistent charge density‐functional tight‐binding parameters for Zn? X (X = Zn, O, S, Se, Te, Cd, H, C, and N). The transferability of the derived parameters has been tested against Pseudo Potential‐Perdew, Burke and Ernzerhof (PP‐PBE) calculations and experimental values (whenever available) for corresponding bulk systems (e.g., hexagonal close packing, zinc‐blende, and wurtzite(wz)), various kinds of nanostructures (such as nanowires, surfaces, and nanoclusters), and also some small molecular systems. Our results show that the derived parameters reproduce the structural and energetic properties of the above‐mentioned systems very well. With the derived parameter set, one can study zinc‐chalcogenide nanostructures of relatively large size which was otherwise prohibited by other methods. The Zn‐Cd parametrization developed in this article will help in studying large semiconductor hetero‐nanostructures of Zn and Cd chalcogenides such as ZnX/CdX core/shell nanoparticles, nanotubes, nanowires, and nanoalloys. © 2012 Wiley Periodicals, Inc.