Pulsed-laser deposition of Ta-doped PZT ferroelectric films for memory applications using conductive oxide La0.25Sr0.75CoO3 and SrRuO3 electrodes |
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| Authors: | ZG Liu J Yin and ZC Wu |
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| Institution: | (1) Institut f?r Experimentelle Physik II, Universit?t Leipzig, Linn?str. 5, 04103 Leipzig, Germany;(2) Interdisziplin?res Zentrum f?r Materialwissenschaften, Martin-Luther-Universit?t Halle-Wittenberg, Hoher Weg 8, 06120 Halle (Saale), Germany |
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| Abstract: | New methods for fabricating highly 𘚡¢-oriented and complete 𘜏¢-textured Pb(Ta0.05Zr0.48Ti0.47)O3 (PTZT) films on Pt/TiO2/SiO2/Si(001) substrates by pulsed-laser deposition have been developed using conductive oxide La0.25Sr0.75CoO3 and SrRuO3 electrodes. The 𘚡¢-preferred orientated PTZT ferroelectric capacitor was not subjected to loss of its polarization after 1᎒10 switching cycles at an applied voltage of 5 V and a frequency of 1 MHz, and the 𘜏¢-textured PTZT film capacitor retains 94.7% of its polarization after 1.5᎒10 switching cycles at 5 V and 50 kHz. The PTZT capacitors using these conductive oxide electrodes have low leakage current dominated by Schottky field emission mechanism. |
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