Optical Characterization of N-Doped GaN-AlxGa1?xN Multi Quantum Wells by Using Infrared Magnetoplasma Spectroscopy

We have used polarized oblique incidence infrared magneto spectroscopy to investigate optical phonons modes and electronic properties of doped GaN- Al_xGa_1–xN MQWs. The effective medium approach of magnetoplasm long period superlattice was used for modeling the reflectivity spectra. The optical phonons contributions as well as free carriers (plasmon and cyclotron response) in analyzing spectra were included in magnetoplasma dielectric tensor in the effective medium approach. The infrared spectra in the presence of a high magnetic field B_o (Voigt geometry) show a number of additional features due to cyclotron resonance that used to calculate electron and hole effective mass.