Near-field magneto-photoluminescence of quantum-dot-like composition fluctuations in GaAsN and InGaAsN alloys |
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| Authors: | A M Mintairov P A Blagnov J L Merz V M Ustinov A S Vlasov A R Kovsh J S Wang L Wei J Y Chi |
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| Institution: | a Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA;b Ioffe Physico-Technical Institute, RAS, St. Petersburg 194021, Russia;c Industrial Technology Research Institute, Hsinchu, Taiwan |
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| Abstract: | Near-field magneto-photoluminescence scanning microscopy has been used to investigate the structural and optical properties of quantum-dot (QD)-like compositional fluctuations in GaAsN and InGaAsN alloys. Sharp spectral lines (halfwidth 0.5–2 meV) from these QDs are observed at T<70 K, and their Zeeman splitting and diamagnetic shifts are used to determine the size (r6–18 nm), density (100 μm−3), and nitrogen composition. Near-field scanning images reveal phase separation effects in the distribution of nitrogen, but little effect appears from the presence or absence of indium. Indium does have a strong effect on the exciton g-factor for observations in a magnetic field. |
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| Keywords: | Author Keywords: Near-field spectroscopy Magnetoluminescence Quantum dots InGaAsN |
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