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Formation of MnAs and MnP layers by reactive laser sputtering
Authors:B N Zvonkov  O V Vikhrova  Yu A Danilov  Yu N Drozdov  A V Kudrin and M V Sapozhnikov
Institution:1.Physicotechnical Research Institute,Lobachevsky State University of Nizhnii Novgorod,Nizhnii Novgorod,Russia;2.Research and Education Center Physics of Solid-State Nanostructures,Lobachevsky State University of Nizhnii Novgorod,Nizhnii Novgorod,Russia;3.Institute for Physics of Microstructures,Russian Academy of Sciences,Nizhnii Novgorod,Russia
Abstract:We show that the technique of pulsed laser sputtering of metallic manganese in a flow of hydrides (arsine or phosphine) allows the deposition of half-metallic MnB 5 compound layers on GaAs (100) substrates. The crystal structure, magneto-optical, and galvanomagnetic properties of the layers are determined by synthesis conditions, mainly by substrate temperature. It is established that the MnAs and MnP layers are ferromagnetic at temperatures up to 300 K.
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