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| 隧道结AlGaInP发光二极管 | |
| 引用本文： | 王国宏,沈光地,郭霞,高国,韦欣,张广泽,马骁宇,李玉璋,陈良惠.隧道结AlGaInP发光二极管[J].半导体学报,2002,23(6). |
| 作者姓名： | 王国宏 沈光地 郭霞 高国 韦欣 张广泽 马骁宇 李玉璋 陈良惠 |
| 作者单位： | 1. 北京工业大学信息学院,北京市光电子技术实验室,北京,100022 2. 中国科学院半导体研究所,北京,100083 3. Institute of Semiconductors,The Chinese Academy of Sciences,Beijing100083,China |
| 摘 要： | 报道了通过隧道结将衬底的导电类型从n型转变到p型,从而可以利用n型GaP作为以n型GaAs为衬底的AlGaInP发光二极管的电流扩展层.n型电流扩展层的电阻率低于p型电流扩展层的电阻率,这种结构改善了电流扩展层的作用,从而提高了发光二极管的光提取效率.对3μm GaP电流扩展层的发光二极管,实验结果表明,隧道结发光二极管的发光功率与具有相同基本结构的传统发光二极管相比,20mA时发光功率提高了50%,100mA时提高了66.7%. |
| 关 键 词： | 隧道结 AlGaInP 高亮度发光二极管 MOCVD |
Tunnel Junction AlGaInP Light Emitting Diode |
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| Wang Guohong,Shen Guangdi,Guo Xia,GAO Guo,Wei Xin,Zhang Guangze,Ma Xiaoyu,Li Yuzhang,Chen Lianghui.Tunnel Junction AlGaInP Light Emitting Diode[J].Chinese Journal of Semiconductors,2002,23(6). | |
| Authors: | Wang Guohong Shen Guangdi Guo Xia GAO Guo Wei Xin Zhang Guangze Ma Xiaoyu Li Yuzhang Chen Lianghui |
| Abstract: | The n-type GaAs substrates are used and their conductive type is changed to p-type by tunnel junction for AlGaInP light emitting diodes(TJ-LED),then n-type GaP layer is used as current spreading layer.Because resistivity of the n-type GaP is lower than that of p-type,the effect of current spreading layer is enhanced and the light extraction efficiency is increased by the n-type GaP current spreading layer.For TJ-LED with 3μm n-type GaP current spreading layer,experimental results show that compared with conventional LED with p-type GaP current spreading layer,light output power is increased for 50% at 20mA and for 66.7% at 100mA. |
| Keywords: | tunnel junction AlGaInP high brightness LED MOCVD |
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