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Nonlinear Absorption Properties of nc-Si:H Thin Films
Authors:GUO Zhenning  GUO Hengqun  LI Shichen  HUANG Yongzhen  WANG Qiming
Affiliation:1. Department of Applied Physics, Huaqiao University,
2. The College of Precision Instrument and Optoelectronics Engineering,Tianjin University.
3. National Intergrated Optoelectronic Lab., Institute of Semiconductors, The Chinese Academy of Sciences,
Abstract:It is reported in this paper that the phenomenon of the saturated absorption of the exciton in hydrogenated nanocrystalline silicon (nc-Si:H) thin film fabricated by plasma enhanced chemical vapor deposition (PECVD) without any post-processing is observed at room temperature using pump-probe technology. This nonlinear optical absorption property is induced by the surface effect of the silicon nanoparticles in nc-Si:H thin films.
Keywords:
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