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Electrophysical and photoelectric properties of (CdSe)1−x(CuInSe2)x solid solutions
Authors:K. O. Dovletov  S. Nuryev  O. Ch. Garagulov  S. N. Krzhivitskaya  S. K. Dovletov
Affiliation:(1) Turkmen Medical Institute, USSR
Abstract:The results are given of measurements of the electrophysical properties in the interval of temperatures 300–900°K and of the photoelectric properties at 300°K of (CdSe)1–x–(CuInSe2)x solid solutions. It is shown that the electrophysical and photoelectric properties of the solid solutions depend on the composition and temperature. The forbidden-band widths calculated from the temperature dependence of the conductivity and from the photoconductivity spectrum, respectively, vary from 1.68 and 1.77 eV for initial compound CdSe to 1.25 and 1.18 eV for the solid solution Cu0.1Cd0.9In0.1Se1.1.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 41–43, January, 1992.
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