| 硅集成的高Q值?高谐振频率的射频变压器 |
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| 引用本文： | 张华斌,刘萍,邓春健,杨健君,刘黎明,陈卉,王红航,熊召新.硅集成的高Q值?高谐振频率的射频变压器[J].重庆邮电大学学报(自然科学版),2017,29(2):161-166. |
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| 作者姓名： | 张华斌 刘萍 邓春健 杨健君 刘黎明 陈卉 王红航 熊召新 |
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| 作者单位： | 1. 电子科技大学 中山学院,广东 中山,528402;2. 电子科技大学 中山学院,广东 中山 528402;电子科技大学 物理电子学院,四川 成都 610054;3. 电子科技大学 中山学院,广东 中山 528402;电子科技大学 计算机科学与工程学院,四川 成都 610054;4. 陕西理工大学 物理与电信工程学院,陕西 汉中,723000 |
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| 基金项目： | 国家自然科学基金(11305031);广东省自然科学基金(S2013010011546);中山市科技计划项目(2015SYF0202) |
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| 摘 要： | 提出一种硅基的用于射频集成电路的新型图形结构变压器.考虑到集成无源变压器器件对射频电路性能的提升具有重大的影响,设计时应尽量提升其性能和降低其占用的芯片面积,故采用凹凸24边形结构和顶层、厚铜金属绕线,使得该片上变压器能够同时具有高性能和低芯片面积的优点.基于TSMC 0.13 μm 1P6M CMOS工艺,应用Cadence Virtuoso工具设计出24边形变压器版图,将设计好的版图图形导入安捷伦Advanced Design System Momentum软件,完成新型变压器的电磁场S参数仿真验证.结果表明,与传统的方形、六边形和八边形变压器相比,自谐振频率分别提高了1.12,1.00,0.58 GHz;最大品质因子增加了2.4,0.9和0.3;面积也分别缩小了9%,10%,6%.该变压器在硅基射频集成电路中应用将进一步提高电路的性能和降低芯片成本.
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| 关 键 词： | 硅基 射频 品质因子 自谐振频率 变压器 |
| 收稿时间： | 2016/5/25 0:00:00 |
| 修稿时间： | 2016/10/21 0:00:00 |
Silicon-based radio frequency integrated circuit's transformer with high quality factor and high self-resonant frequency |
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| ZHANG Huabin,LIU Ping,DENG Chunjian,YANG Jianjun,LIU Liming,CHEN Hui,WANG Honghang and XIONG Zhaoxin.Silicon-based radio frequency integrated circuit's transformer with high quality factor and high self-resonant frequency[J].Journal of Chongqing University of Posts and Telecommunications,2017,29(2):161-166. |
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| Authors: | ZHANG Huabin LIU Ping DENG Chunjian YANG Jianjun LIU Liming CHEN Hui WANG Honghang and XIONG Zhaoxin |
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| Institution: | Zhongshan Institute, University of Electronic Science and Technology of China, Zhongshan 528402, P.R. China,1.Zhongshan Institute, University of Electronic Science and Technology of China, Zhongshan 528402, P.R. China; 2.School of Physical and Electronics, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China,1.Zhongshan Institute, University of Electronic Science and Technology of China, Zhongshan 528402, P.R. China; 2.School of Computer Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, P.R. China,Zhongshan Institute, University of Electronic Science and Technology of China, Zhongshan 528402, P.R. China,Zhongshan Institute, University of Electronic Science and Technology of China, Zhongshan 528402, P.R. China,Zhongshan Institute, University of Electronic Science and Technology of China, Zhongshan 528402, P.R. China,Zhongshan Institute, University of Electronic Science and Technology of China, Zhongshan 528402, P.R. China and Department of Physical and Telecommunication Engineering Dept, Shaanxi Sci-Tech University, Hanzhong 723000, P.R. China |
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| Abstract: | A novel graphic structure transformer on silicon substrate is proposed for radio frequency integrated circuits(RFICs).Considering passive integrated transformer devices has a great effect on the improvement of characteristic at radio frequency integrated circuits,the top level thick Cu metal and 24 side concave convex structure are utilized to ensure the transformer with the advantage of better performance and less chip area.Using Cadence Virtuoso layout tools and Agilent ADS Momentum,the novel transformer is designed based on TSMC 0.13 μm 1P6M CMOS technology.Compared with the traditional square,hexagonal and octagonal transformer,the result shows the novel transformer has 1.12,1.00 and 0.58 GHz improvements in self-resonant frequency(SRF),and 2.4,0.9 and 0.3 enhancements in quality factor,9%,10%,and 6% reductions in chip area,respectively.Therefore,the transformer in radio frequency integrated circuits will further improve the circuit performance and reduce the chip price. |
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| Keywords: | Silicon-based radio frequency quality factor self-resonant frequency transformer |
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