等离子体源离子注入过程中半圆形碗状样品的两维温度分布

等离子体源离子注入过程(PSII)中样品温度是一个非常重要的参量。由于注入到样品上的能量很大，导致样品温度很高，所以在实验中获知样品的温度分布有着很重要的意义。本文利用热传导方程建立了半圆形碗状样品内部温度升高模型，研究样品内温度演化过程。以注入离子束流作为能量输入项，热辐射为能量损失项，并考虑了热辐射过程中样品的形状因子的影响。考察了离子注入过程中样品上所施加负偏压的脉冲宽度和频率对样品温度分布的影响。研究结果显示，脉冲频率达到一定值后，样品温度不再随频率增加而升高。

Two-dimensional temperature distribution inside a hemispherical bowl-shaped target for plasma source ion implantation

One important parameter for the plasma source ion implantation (PSII) process is the target temperature obtained during the surface modification. Because the power input to the target being implanted can be large, its temperature is quite high. The target temperature prediction is useful, whether the high temperature is required in the experiment. In addition, there is likely to be temperature variation across the target surface, which can lead to locally different surface properties. In this paper, we have presented a model to predict and explain the temperature distribution on a hemispherical bowl-shaped vessel during plasma source ion implantation. A two-dimensional fluid model to derive both the ion flux to the target and the energy imparted to the substrate by the ions in the plasma sheath simulation is employed. The calculated energy input and radiative heat loss are used to predict the temperature rise and variation inside the sample in the thermal model. The shape factor of the target for radiation is taken into account in the radiative energy loss. The influence of the pulse duration and the pulsing frequency on the temperature distribution is investigated in detail. Our work shows that at high pulsing frequencies the temperature of the bowl will no longer rise with the increase of the pulsing frequency.