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Synthesis, crystal structure, and luminescent properties of a binuclear gallium complex with mixed ligands
Authors:Qiao Juan  Wang Li D  Duan Lian  Li Yang  Zhang De Q  Qiu Yong
Institution:Key Lab of Organic Optoelectronics & Molecular Engineering of Ministry of Education, Beijing 100084, China.
Abstract:By introducing tridentate Schiff base ligands, a binuclear gallium complex with mixed ligands, bis(salicylidene-o-aminophenolato)-bis(8-quinolinolato)-bis-gallium(III) Ga(2)(saph)(2)q(2)], has been synthesized and structurally characterized by single-crystal X-ray crystallography. Crystal data for C(44)H(30)Ga(2)N(4)O(6) are as follows: space group, triclinic, P; a = 11.357(3) A, b = 12.945(3) A, c = 12.947(3) A, alpha = 103.461(15) degrees, beta = 100.070(7) degrees, gamma = 96.107(18) degrees, Z = 2. This complex was identified as a dimeric complex of hexacoordinated gallium with strong intermolecular and intramolecular pi-pi stacking interactions between the pyridyl/pyridyl rings. The thermal analysis showed that Ga(2)(saph)(2)q(2) can readily form a stable amorphous glass with a high glass transition temperature (T(g) = 204 degrees C), which is 27 degrees C higher than that of tris(8-hydroxyquinolinolate)aluminum (Alq(3)). In addition, a high photoluminescence efficiency (phi(PL)) of 0.318 in DMF has been demonstrated, although the central gallium atom can result in heavy-atom quenching. Organic light-emitting diodes (OLEDs) based on this complex displayed a turn-on voltage as low as 2.5 V and a high efficiency. Even at a low doping concentration of 1%, the doped Ga(2)(saph)(2)q(2) devices with 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as the dopant exhibited excellent red emission centered at 628 nm with improved durability, compared with the case of Alq(3) as the host. These distinguishing properties of Ga(2)(saph)(2)q(2) make it a good candidate as a novel electron-transporting and emitting material for OLEDs.
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