| Abstract: | The third-order susceptibility of InxGa1-xN/GaN quantum well (QW) has been investigated by taking into account the strain-induced piezoelectric (PZ) field, and the effective-mass SchrSdinger equation is solved numerically. It is shovn that the third-order susceptibility for third harmonic generation (THG)of InxGa1-x,N/GaN QW is related to indium content in QW and the intensity of the PZ field. The characteristics ofX(3)THG(-3ω,(3) ω, ω,ω) as the function of the wavelength of incident beam, well width and indium content, have been analyzed. |
