Peculiarities of electron spectrum rearrangement for the double-well heterostructure GaAs/AlGaAs with a variable dimensionality of electronic states in an external electric field

Peculiarities of the electron spectrum rearrangement for the double-well heterostructure GaAs/AlGaAs with a variable dimensionality of electronic states in an external electric field are investigated theoretically and experimentally. The structure is an important part of the active element of a quantum-well unipolar semiconductor laser proposed by the authors earlier. The possibility of controlling the dimensionality of the lower laser subband in such an active element by an external electric field is demonstrated.