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Effect of oxygen vacancy defect on the magnetic properties of Co-doped ZnO
Authors:Weng Zhen-Zhen  Zhang Jian-Min  Huang Zhi-Gao  Lin Wen-Xiong
Affiliation:Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China; College of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China; School of Physics and OptoElectronics Technology, Fujian Normal University, Fuzhou 350007, China
Abstract:The influence of oxygen vacancy on the magnetism of Co-doped ZnO has been investigated by the first-principles calculations. It is suggested that oxygen vacancy and its location play crucial roles on the magnetic properties of Co-doped ZnO. The exchange coupling mechanism should account for the magnetism in Co-doped ZnO with oxygen vacancy and the oxygen vacancy is likely to be close to the Co atom. The oxygen vacancy (doping electrons) might be available for carrier mediation but is localized with a certain length and can strengthen the ferromagnetic exchange interaction between Co atoms.
Keywords:Co-doped ZnO  oxygen vacancy  ferromagnetism
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