An analytical study of substrate current in submicron MOS devices

In the present communication we have tried to study the substrate current behavior in the sub-micron devices after solving the second order differential equation using appropriate boundary conditions. Simple and accurate models for maximum lateral field, drain saturation voltage and for ionization length have been developed. The simulation result of ionization length shows a good match with the known result. Analysis also shows that dominant contributor to the error in the ionization length is not only because of the excess saturated voltage but also due to the channel length and the gate to source voltage. For sub-micron devices the saturation region shifts towards the source for higher drain voltage and larger gate oxide thickness.Received: 27 September 2004, Published online: 26 November 2004PACS: 85.30.De Semiconductor-device characterization, design, and modeling - 85.30.Tv Field effect devices