嵌入Ag纳米颗粒层的DNA忆阻器

构建了具有“Al/DNA-CTMAB/Ag NPs/DNA-CTMAB/ITO”结构的有机忆阻器件, 并对其电流-电压 (I-V)曲线进行测量. 结果表明, 嵌入Ag纳米颗粒层, 不仅可以增强器件的导电性, 而且忆阻特性也显著提高. 当颗粒粒径在15–20 nm范围时, 开-关电流比I_ON/I_OFF能够达到10³. 器件的I-V特性受扫描电压幅值V_A的影响, 随着V_A的增大, 高阻态的电流变化较小, 而低阻态的电流明显增大, 开(或关)电压V_SET (V_RESET)和I_ON/I_OFF增加. 实验还发现, 器件高低阻状态的相互转换取决于外加电场的方向, 说明该忆阻器具有极性.

Organic memristive devices based on DNA embedded in silver nanoparticles layer

Two-terminal electrical bistable device is fabricated with structure “Al/deoxyribonucleic acid-cetyltrimethylam- monium bromide/silver nanoparticles/deoxyribonucleic acid-cetyltrimethylammonium bromide/indium tin oxide”, and I-V curves are measured. The results show that the conductivity and the memristive characteristics are significantly improved by the embedding Ag nanoparticles layer. The optimal particle diameters are in a range of 15 - 20 nm, and the maximum on/off current ratio can reach 10³. It is also found that I-V characteristic of the device depends on the sweeping voltage amplitude V_A. As V_A increases, switching voltages (V_SET, V_RESET) and the on/off current ratio I_ON/I_OFF increase. Furthermore, the transition between high-and low-resistance-state depends on the direction of the applied electric field, which shows that the device possesses polarity.