| 钯缓冲层制备GaN纳米线及光学特性分析 |
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| 引用本文： | 薛成山,郭永福,石锋,庄惠照,刘文军.钯缓冲层制备GaN纳米线及光学特性分析[J].微纳电子技术,2010,47(1). |
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| 作者姓名： | 薛成山 郭永福 石锋 庄惠照 刘文军 |
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| 作者单位： | 山东师范大学,半导体研究所,济南,250014 |
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| 基金项目： | 国家自然科学基金重大研究计划项目(90301002,90201025) |
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| 摘 要： | 利用射频磁控技术,在Si衬底上以Pd为缓冲层、Ga2O3粉末作为生长GaN的Ga源,成功制备出大量GaN纳米线。通过扫描电子显微镜、透射电子显微镜和高分辨透射电子显微镜观察分析得出GaN纳米线为单晶结构,纳米线的直径为10～60nm,长度达几十个微米。X射线衍射和X射线能量散射谱显示合成的纳米线为GaN单晶结构。傅里叶变换红外吸收光谱和光致发光光谱测试表明,制得的GaN纳米线与GaN体材料相比具有不同的光学特性。
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| 关 键 词： | 氮化镓 纳米线 磁控溅射 单晶 氨化 催化剂 |
Synthesis and Optical Property of GaN Nanowires by Pd Buffer Layers |
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| Xue Chengshan,Guo Yongfu,Shi Feng,Zhuang Huizhao,Liu Wenjun.Synthesis and Optical Property of GaN Nanowires by Pd Buffer Layers[J].Micronanoelectronic Technology,2010,47(1). |
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| Authors: | Xue Chengshan Guo Yongfu Shi Feng Zhuang Huizhao Liu Wenjun |
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| Institution: | Institute of Semiconductors;Shandong Normal University;Jinan 250014;China |
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| Abstract: | Single crystalline wurzite GaN nanowires were successfully synthesized on the Pd catalyzed Si substrate through RF magnetron sputtering deposition method.The Ga2O3 powder was used as the source material of Ga for synthesizing GaN nanowires.Observations by using scanning electron microscopy,transmission electron microscopy and high-resolution transmission electron microscopy show that the GaN nanowire is a single-crystal structure.The diameter of the nanowires is in the range of 10-60 nm with the lengths up ... |
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| Keywords: | GaN nanowire magnetron sputtering single crystal aminating catalyst |
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