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Study of post-growth annealing and Ga coverage effects in low-density GaAs/AlGaAs quantum dots grown by modified droplet epitaxy |
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| Authors: | V Mantovani S Sanguinetti M Guzzi E Grilli M Gurioli K Watanabe N Koguchi |
| Institution: | a I.N.F.M. and Dipartimento di Scienza dei Materiali, Universitá di Milano Bicocca, Via Cozzi 53, Milano I-20125, Italy;b I.N.F.M. and Dipartimento di Fisica, Universitá di Firenze, Via Sansone 1, Sesto Fiorentino I-50019, Italy;c National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan |
| Abstract: | We present a detailed analysis of the Ga coverage and of the post-growth annealing effects on the optical properties of very-low-density self-assembled GaAs/AlGaAs quantum dots grown by modified droplet epitaxy. Through theoretical calculation of the QD electronic states, including thermally activated Al–Ga interdiffusion processes, we were able to relate our spectroscopic observations to QD structural properties. |
| Keywords: | A1 Quantum Dots A3 Molecular beam epitaxy B2 Semiconducting III– V materials |
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