Electrophysical properties of dielectric films in MDM-structures

Using the methods of reactive cathode sputtering in a low-voltage, penning-discharge installation, dielectric films from silica, silicon nitride, aluminum nitride, etc. are obtained. Parameters of the films in MDM structures, their optical properties and porosity are investigated as a function of the deposition rate, substrate temperature and reaction gas pressure. It is found out that the films from silicon nitride exhibit the highest dielectric strength and those from silicon dioxide show the least dielectric loss.