| Influence of the deposition parameters on the transition region of hydrogenated silicon films growth |
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| 作者姓名： | 雷青松 吴志猛 耿新华 赵颖 奚建平 |
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| 作者单位： | Institute of Micro and Nano Science and Technology, Shanghai Jiaotong University, Shanghai 200030, China;Institute of Micro and Nano Science and Technology, Shanghai Jiaotong University, Shanghai 200030, China;Institute of Photo-Electronics, Nankai University, Tianjin 300071, China;Institute of Photo-Electronics, Nankai University, Tianjin 300071, China;Institute of Micro and Nano Science and Technology, Shanghai Jiaotong University, Shanghai 200030, China |
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| 基金项目： | Project supported by the National Key Basic Project of China (Grant Nos G2000028202 and G2000028203). |
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| 摘 要： | Hydrogenated microcrystalline and amorphous silicon thin films were prepared by very high frequency plasmaenhanced chemical vapour deposition （VHF PECVD） by using a mixture of silane and hydrogen as source gas. The influence of deposition parameters on the transition region of hydrogenated silicon films growth was investigated by varying the silane concentration （SC）, plasma power （Pw）, working pressure （P）, and substrate temperature （Ts）. Results suggest that SC and Ts are the most critical factors that affect the film structure transition from microcrystalline to amorphous phase. A narrow region in the range of SC and Ts, in which the rapid phase transition takes place, was identified. It was found that at lower P or higher Pw, the transition region is shifted to larger SC. In addition, the dark conductivity and photoconductivity decrease with SC and show sharp changes in the transition region. It proposed that the transition process and the transition region are determined by the competition between the etching effect of atomic hydrogen and the growth of amorphous phase.
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| 关 键 词： | 薄膜生长 微晶硅 无定形硅 蒸汽沉积 VHF PECVD |
| 收稿时间： | 2005-03-10 |
| 修稿时间： | 2005-03-102005-04-27 |
Influence of the deposition parameters on the transition region of hydrogenated silicon films growth |
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| Lei Qing-Song,Wu Zhi-Meng,Geng Xin-Hu,Zhao Ying and Xi Jian-Ping.Influence of the deposition parameters on the transition region of hydrogenated silicon films growth[J].Chinese Physics B,2005,14(11):2342-2347. |
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| Authors: | Lei Qing-Song Wu Zhi-Meng Geng Xin-Hu Zhao Ying and Xi Jian-Ping |
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| Abstract: | Hydrogenated microcrystalline and amorphous silicon thin films were prepared by very high frequency plasma-enhanced chemical vapour deposition (VHF PECVD) by using a mixture of silane and hydrogen as source gas. The influence of deposition parameters on the transition region of hydrogenated silicon films growth was investigated by varying the silane concentration (SC), plasma power (Pw), working pressure (P), and substrate temperature (Ts).Results suggest that SC and Ts are the most critical factors that affect the film structure transition from microcrystalline to amorphous phase. A narrow region in the range of SC and Ts, in which the rapid phase transition takes place, was identified. It was found that at lower P or higher Pw, the transition region is shifted to larger SC. In addition, the dark conductivity and photoconductivity decrease with SC and show sharp changes in the transition region. It proposed that the transition process and the transition region are determined by the competition between the etching effect of atomic hydrogen and the growth of amorphous phase. |
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| Keywords: | microcrystalline silicon amorphous silicon transition region VHF PECVD |
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