| HgCdTe材料应用与制备的进展 |
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| 引用本文： | 王雷,高鼎三. HgCdTe材料应用与制备的进展[J]. 发光学报, 1985, 6(4): 369-377 |
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| 作者姓名： | 王雷 高鼎三 |
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| 作者单位： | 吉林大学电子科学系 |
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| 摘 要： | HgCdTe是一种有广泛应用前景的Ⅱ-Ⅵ族化合物半导体光电材料。从投资上看,它已为仅次于Si和GaAs的第三种最重要的半导体。HgCdTe是制作红外探测器的最佳材料。本文简要地介绍了HsCdTe材料的性质以及它的应用和制备进展,着重描述了在红外探测器上的应用。对制备HgCdTe单晶的各种工艺方法作了比较说明,较详细地介绍了滑动液相外延(LPE)制备HgCdTe单晶薄膜技术。
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| 收稿时间： | 1985-05-25 |
PROGRESS IN APPLICATION AND PREPARATION OF HgCdTe MATERIAL |
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| Wang Lei,Gao Dingsan. PROGRESS IN APPLICATION AND PREPARATION OF HgCdTe MATERIAL[J]. Chinese Journal of Luminescence, 1985, 6(4): 369-377 |
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| Authors: | Wang Lei Gao Dingsan |
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| Affiliation: | Department of Electronics Science, Jilin University |
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| Abstract: | This paper introduces briefly the properties of HgCdTe and the progress in its applications and preparation. The applications to infrared detector are emphasized. A comparison of various technology and methods for growth of HgCdTe crystal is given. The sliding liquid phase epitaxial (LPE) growth of HgCdTe thin film is described in detail. |
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