Auger recombination in diamond-like narrow-gap semiconductors

In the calculation of the transition rate of Auger recombination in the Kane model the overlap integral between the wave functions of the conduction and heavy hole bands is equal to zero at the threshold. As a result the preexponential function has a different temperature dependence in comparison with the case of simple parabolic bands. The theoretical value of the recombination lifetime is in agreement with experimental data for InSb at 300 K. Estimates of the overlap integral given earlier are analyzed.