High-voltage field-controlled integrated thyristor |
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Authors: | I V Grekhov A V Rozhkov L S Kostina A V Konovalov Yu L Fomenko |
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Institution: | 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, Russia 2. ZAO VZZP Mikron, Voronezh, 394033, Russia
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Abstract: | The design and technology of powerful field-controlled integrated thyristors, new energy-saving devices intended for converter equipment, are considered. The turn-on and turn-off current and voltage waveforms of the n+p′N-n′p + microthyristor chip are presented, and turn-on and turn-off mechanisms are discussed. The development of local dynamic breakdown at turn-off is experimentally studied. The respective waveforms for this process are given, and the type of breakdown at a current density of about 150 A/cm2 is demonstrated. The current-voltage characteristics in the on state at room temperature and at 125°C indicate the temperature dependence changes sign at a current density above 60 A/cm2, becoming positive. This is significant for parallel operation of microthyristor chips in a module. It is shown that the static and dynamic characteristics of simple-in-design field-controlled integrated thyristors are highly competitive with those of insulated-gate bipolar transistors-basic devices of advanced high-power converter equipment. |
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