Enhancement of ferromagnetism in polycrystalline Si0.965Mn0.035:B films by boron plasma treatment |
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Authors: | Liu Xing-Chong Huang Xiao-Ping Zhang Feng-Ming |
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Affiliation: | Department of Physics, Nanjing University, Nanjing 210093, China; School of Physical Electronics, University of Electronic Science andTechnology of China, Chengdu 610054, China |
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Abstract: | This paper reports that the polycrystallineSi0.965Mn0.035:B films have been prepared by cosputteringdeposition followed by rapid thermal annealing for crystallization.The polycrystalline thin films consist of two ferromagnetic phases.The low temperature ferromagnetic phase with Curie temperature (Tc) of about 50~K is due to the Mn4Si7 phase in the films, while the high temperature one (Tc~ 250~K) is resulted from the incorporation of Mn into silicon. The films are treated by boron plasma excited with the approach of microwave plasma enhanced chemical vapor deposition for 40 minutes. After plasma treatment, it is observed that no extra magnetic phases or magnetic complexes exist in the films, while both the high temperature saturation magnetization and the hole concentration in the films increase. The obvious correlation between the magnetic properties and the electrical properties of the polycrystalline Si0.965Mn0.035:B films suggests that the hole carriersplay an important role in Si:Mn diluted magnetic semiconductors. |
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Keywords: | magnetic semiconductors silicon thin films |
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