Xenon-beam-induced atomic transport through Cr/Al and Cr2N/Al interfaces |
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Authors: | T Kacsich Th Weber W Bolse K P Lieb |
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Institution: | (1) II. Physikalisches Institut and SFB 345, Universität Göttingen, Bunsenstrasse 7-9, D-37073 Göttingen, Germany |
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Abstract: | Cr layers (60–75 nm) on Al substrates and Cr2N layers (40–120 nm) on Al+3 wt.% Mg substrates were irradiated at 80 K and 300 K with 150–900 keV Xe-ions. The ion-beam-induced interface mixing was analyzed by means of Rutherford Backscattering Spectrometry (RBS). Both systems exhibit fairly small mixing rates, with those of Cr/Al being enhanced at 300 K target temperature, due to radiation-enhanced diffusion. The observed interface broadening is compared with predictions of ballistic and thermal spike mixing models. The low-temperature mixing rates in the system Cr/Al are underestimated by the ballistic model, but are rather well reproduced by local spike models. Mixing in the Cr2N/Al system at both temperatures, on the other hand, seems to be rather well described by the ballistic model. |
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Keywords: | 61 80 Jh 71 30 +h 79 20 Rf |
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