Study of carrier doping across the parent Mott insulator La2CuO4 |
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| Authors: | Seiki Komiya Ichiro Tsukada |
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| Affiliation: | Central Research Institute of Electric Power Industry, Yokosuka, Kanagawa 240-0196, Japan |
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| Abstract: | Ce substituted La2CuO4 single crystals are investigated to try doping electrons into the parent Mott insulator. Transport properties of slightly Ce substituted La2CuO4 show that carriers are still holes activated from an impurity level of which activation energy is the same as the parent La2CuO4. |
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