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Two-band conduction in TiO2 |
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| Authors: | D V Gritsenko S S Shaĭmeev V V Atuchin T I Grigor’eva L D Pokrovskiĭ O P Pchelyakov V A Gritsenko A L Aseev V G Lifshits |
| Institution: | (1) Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia;(2) Institute of Automatics and Control Processes, Far East Division, Russian Academy of Sciences, Vladivostok, 690041, Russia |
| Abstract: | The contribution of electrons and holes to the electrical conduction of titanium dioxide TiO2 in the Si/TiO2/Al structure is determined in experiments on the injection of minority carriers from n-type and p-type silicon layers. It is established that both electrons and holes contribute to electrical conduction of the titanium dioxide layer in the Si/TiO2/Al structure; i.e., the electrical conduction of titanium dioxide has a two-band nature. |
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