An 8-W diode side pumped solid-state 593-nm laser |
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Authors: | R. Chen L. Guo X. Yan B. Xiong F. J. Yan X. C. Lin J. M. Li |
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Affiliation: | 1.Institute of Semiconductors,Chinese Academy of Sciences,Beijing,China |
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Abstract: | We report a double z-type folded plane-plane symmetrical cavity diode side pumped solid state yellow-orange laser at 593 nm by using intracavity sum-frequency mixing. By carefully designing the cavity and employing several techniques to increase sum-frequency efficiency, a Q-switched yellow-orange laser source, with an average output power of 8 W, a beam quality factor M 2 = 4.86, and a repetition rate of 8 kHz is developed. In this paper, we first use 1338 and 1064 nm emissions of Nd:YAG crystal to generate 593 nm yellow-orange laser beam by intracavity sum-frequency mixing (SFM). |
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