| ULSI制备中多层布线导体铜的抛光液与抛光技术的研究 |
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| 引用本文： | 刘玉岭,李嘉席,檀柏梅,梁存龙.ULSI制备中多层布线导体铜的抛光液与抛光技术的研究[J].电子工业专用设备,2007,36(10):17-21. |
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| 作者姓名： | 刘玉岭 李嘉席 檀柏梅 梁存龙 |
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| 作者单位： | 1. 河北工业大学,天津,300130
2. 河北冀雅电子有限公司,河北,石家庄,050071 |
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| 摘 要： | 提出了在碱性浆料中ULSI多层布线导体铜化学机械抛光的模型,对铜CMP所需达到的平面化、选择性、抛光速率控制、浆料的稳定及洁净度、抛光液成分的优化选择进行了实验研究。
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| 关 键 词： | 化学机械抛光 多层布线 甚大规模集成电路 铜浆料(抛光液) |
| 文章编号： | 1004-4507（2007）10-0017-05 |
| 修稿时间： | 2007-10-08 |
CMP Study of Multilayer Wiring Conductor Copper in ULSI Manufacturing |
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| LIU Yu-ling,LI Jia-xi,TAN Bai-mei,LIANG Cun-long.CMP Study of Multilayer Wiring Conductor Copper in ULSI Manufacturing[J].Equipment for Electronic Products Marufacturing,2007,36(10):17-21. |
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| Authors: | LIU Yu-ling LI Jia-xi TAN Bai-mei LIANG Cun-long |
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| Institution: | 1. Hebei University of Technology, Tianjin 300130, China; 2. Hebei Jiya Electronic Limited Company, Shijiazhuang 050071, China |
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| Abstract: | A model for copper CMP in alkaline polish slurry is introduced in the paper. A lot of study on the best choice for the componentsof corresponding polish slurry, the global planarization, the selective, the controlof polish rate, the stability and pureness of the polish slurry required by copper CMP have been made. |
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| Keywords: | CMP Multilayerwiring ULSI Copper Slurry |
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