PDSOI NMOS器件激光模拟光电流效应

为获得N型金属氧化物半导体(NMOS)器件在γ射线辐照条件下的光电流特性，采用激光模拟技术，利用部分耗尽型绝缘体上硅(PDSOI)工艺NMOS器件进行激光照射试验，获得不同尺寸和拓扑结构器件在激光照射条件下光电流和激光入射能量之间的关系。利用TCAD仿真工具进行器件的光电流仿真，对比TCAD仿真与激光模拟试验数据，两组数据结果基本一致，验证了激光模拟技术的可行性和准确性。通过与理论计算得到的光电流进行对比，获得了理论计算与试验光电流之间的关系，并由此得到器件寄生双极晶体管在激光照射条件下的放大倍数。

Photocurrent effect of PDSOI NMOS device by laser simulation

The laser simulation method is adopted to study the photocurrent characteristics of N-Metal-Oxide-Semiconductor(NMOS) devices under gamma ray irradiation. The laser experiments are carried out, and the relationship between photocurrent and laser incident energy is obtained for Partial- Depleted Silicon On Insulator(PDSOI) NMOS devices with different sizes and different structures. The photocurrent characteristics of devices are simulated by using TCAD simulation tool. By comparing TCAD simulation and laser experiment data, the results of the two groups of data are basically consistent, which verifies the feasibility and accuracy of the laser simulation technology. The relationship of photocurrent between theoretical calculations and laser experiments is obtained, based on which, the magnification factor of the parasitic bipolar transistor is calculated under the laser condition.