Relaxation and shift of the precession frequency of the spin of a negative muon in n-type silicon |
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Authors: | V N Gorelkin V G Grebinnik K I Gritsai V N Duginov V A Zhukov T N Mamedov V G Ol’shevski V Yu Pomyakushin A V Stoikov I L Chaplygin I A Krivosheev B A Nikol’skii A N Ponomarev |
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Institution: | (1) Moscow Physicotechnical Institute, 141700 Dolgoprudnyi, Moscow District, Russia;(2) Joint Institute for Nuclear Research, 141980 Dubna, Moscow District, Russia;(3) “Kurchatov Institute” Russian Science Center, 123182 Moscow, Russia |
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Abstract: | The residual polarization of negative muons in n-type silicon with impurity density (1.6±0.2) · 1013 cm−3 is investigated as a function of temperature in the range 10–300 K. The measurements are performed in an external magnetic
field of 0.08 T oriented transversely to the spin of the muons. Relaxation of the muon spin and a shift of the precession
frequency are observed at temperatures below 30 K. The relaxation rate at 30 K equals 0.25±0.08 μs−1. The shift of the precession frequency at 20 K equals 7 · 10−3. Both the relaxation rate and the shift of the precession frequency increase as the temperature decreases. At temperatures
below 30 K the relaxation rate is described well by the relation Λ=bT
−q
, where q=2.8±0.2.
Pis’ma Zh. éksp. Teor. Fiz. 63, No. 7, 539–543 (10 April 1996) |
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