截止波长12 μm的p型-InAs0.04Sb0.96材料的熔体外延生长

为了获得p-型的长波长InAsSb材料并研究掺杂剂Ge对材料特性的影响，用熔体外延法生长了掺Ge的波长为12 μm的p型-InAsSb 外延层.用傅里叶红外光谱仪、Van der Pauw 法和电子探针微分析研究了材料的透射光谱、电学性质以及组分的分布.结果表明,两性杂质Ge在熔体外延生长的InAs0.04Sb0.96材料中起受主杂质作用.当外延层的组分相同时，材料的截止波长不随掺Ge浓度的变化而变化，但是随着外延层中掺Ge量的增加，外延层的透射率下降.掺杂原子Ge在外延层的表面及生长方向的分布都是相当均匀的.77 K下测得，载流子浓度为9.18×1016 cm－3的掺Ge的p型-InAs0.04Sb0.96样品，其空穴迁移率达到1 120 cm2·Vs－1.

Melt Epitaxial Growth of P-type InAs0.04Sb0.96 Materials with a Cutoff Wavelength of 12 μm

In order to obtain p-type InAsSb materials with long-wavelength,and research the behavior of the dopant Ge in this material,Ge-doped p-type InAs0.04Sb0.96 epilayers with a cutoff wavelength of 12 μm were grown by melt epitaxy (ME).The transmission spectra,electrical properties,and composition distributions of the materials were studied by means of Fourier transform infrared (FTIR) spectrometer,Van der Pauw measurements,and electroprobe microanalysis (EPMA) respectively.The results show that the double impurity Ge acts as an acceptor in long-wavelength InAs0.04Sb0.96 epilayers grown by ME.The cutoff wavelengths of the epilayers with different Ge densities show that no significant shifts for epilayers with the same composition.The transmittance of the epilayer decreases as the Ge amount in the epilayer increases.The distributions of Ge atoms both on the surface and along the growth direction of the epilayers,are rather homogeneous.At 77 K,a highest hole mobility of 1 120 cm2·Vs－1 with a carrier density of 9.18×1016 cm－3 was achieved for a Ge- doped p-type InAs0.04Sb0.96 sample.