| 绝缘氧化层上自离子注入Si薄膜W线发光性能的调控 |
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| 引用本文： | 王茺,杨宇,杨瑞东,李亮,韦冬,靳映霞,Bao Ji-Ming. 绝缘氧化层上自离子注入Si薄膜W线发光性能的调控[J]. 物理学报, 2011, 60(10): 106104-106104. DOI: 10.7498/aps.60.106104 |
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| 作者姓名： | 王茺 杨宇 杨瑞东 李亮 韦冬 靳映霞 Bao Ji-Ming |
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| 作者单位： | 1. 云南大学光电信息材料研究所,昆明 650091;2. Department of Electrical and Computer Engineering,University of Houston,Houston,Texas 77204,USA |
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| 基金项目： | 国家自然科学基金(批准号:10964016,10990103)、教育部科学技术研究重点项目(批准号:210207)和云南大学理工基金(批准号:2009E27Q)资助的课题. |
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| 摘 要： | 对SOI基片上的Si薄膜进行了一系列Si+自注入和热退火的改性实验,并利用低温光致发光(PL)光谱对这些Si薄膜样品的发光性能进行了测试. 在这些SOI样品的PL光谱中观察到了丰富的光学结构,包括D1,D2,D3,X以及异常尖锐的W线. 通过对比在同等光谱测试条件下的W线归一化强度,获得了针对SOI基片发射W线较为理想的自注入和热退火参数. 同时,还对D系列发光峰以及W线的缺陷起源和光学性质进行了很好的讨论.关键词：SOI结构自离子注入W线近红外发光器件
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| 关 键 词： | SOI结构 自离子注入 W线 近红外发光器件 |
| 收稿时间： | 2010-10-23 |
| 修稿时间： | 2011-02-03 |
Manipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer |
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| Wang Chong,Yang Yu,Yang Rui-Dong,Li Liang,Wei Dong,Jin Ying-Xia and Bao Ji-Ming. Manipulations of properties of the W-line emitting from the Si+ Self-ion-implanted Si thin films on insulated oxide layer[J]. Acta Physica Sinica, 2011, 60(10): 106104-106104. DOI: 10.7498/aps.60.106104 |
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| Authors: | Wang Chong Yang Yu Yang Rui-Dong Li Liang Wei Dong Jin Ying-Xia Bao Ji-Ming |
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| Affiliation: | Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091;Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091;Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091;Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091;Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091;Institute of Optoelectronic Information Materials, Yunnan University, Kunming 650091;Department of Electrical and Computer Engineering, University of Houston, Houston, Texas 77204, USA |
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| Abstract: | The Si+ self-ion-implanted and annealing experiments are conducted on the Si film based on the silicon-on-insulator wafers. The photoluminescence (PL) spectroscopy is used to investigate the luminescence properties of these Si film samples. Plentiful optical structures are observed in the PL spectra, including the D1, D2, D3, X, and the sharp W lines. By comparing the normalized PL intensities recorded by the same spectral experiments, we obtain the optimum self-ion-implanted and thermal annealing parameters. In addition, the defect origins and optical properties of the series of the D peaks and W line are well discussed. |
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| Keywords: | SOI structure self-ion-implantation W line emission near-infrared light emission device |
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