| 一种考虑IGBT基区载流子注入条件的物理模型 |
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| 引用本文： | 杜明星,魏克新. 一种考虑IGBT基区载流子注入条件的物理模型[J]. 物理学报, 2011, 60(10): 108401-108401. DOI: 10.7498/aps.60.108401 |
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| 作者姓名： | 杜明星 魏克新 |
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| 作者单位： | 天津大学电气与自动化工程学院,天津 300072;天津理工大学天津市复杂系统控制理论及应用重点实验室,天津 300384 |
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| 基金项目： | 国家自然科学基金(批准号:50977063)、国家高技术研究发展计划(批准号:2008AA11A145)和天津市科技支撑计划重点项目(批准号:09ZCKFGX01800)资助的课题. |
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| 摘 要： | 提出了一种考虑绝缘栅极双极晶体管(insulated gate bipolar transistor,IGBT) 基区载流子不同注入条件的物理模型. 在小注入和大注入情况下,分别建立描述IGBT基区载流子运动的输运方程(ambipolar transport equation,ATE),并确定边界条件. 采用傅里叶级数法求解载流子输运方程,并将计算结果分别与IGBT手册提供的实验数据和Hefner模型计算结果相比较,验证了本文提出物理模型的正确性.关键词：绝缘栅极双极晶体管物理模型注入条件双极输运方程
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| 关 键 词： | 绝缘栅极双极晶体管 物理模型 注入条件 双极输运方程 |
| 收稿时间： | 2011-03-04 |
A physics-based model of insulated gate bipolar transistor with all free-carrier injection conditions in base region |
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| Du Ming-Xing and Wei Ke-Xin. A physics-based model of insulated gate bipolar transistor with all free-carrier injection conditions in base region[J]. Acta Physica Sinica, 2011, 60(10): 108401-108401. DOI: 10.7498/aps.60.108401 |
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| Authors: | Du Ming-Xing and Wei Ke-Xin |
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| Affiliation: | School of Electrical Engineering and Automation, Tianjin University, Tianjin 300072,China)(Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China;School of Electrical Engineering and Automation, Tianjin University, Tianjin 300072,China)(Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China |
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| Abstract: | A physics-based model of insulated gate bipolar transistor (IGBT) with all free-carrier injection conditions in a base region is presented, from which the ambipolar transport equations (ATEs) in high-level injection and low-level injection are deduced separately. Moreover, the boundary conditions of ATE are determined. In a more compact solution a Fourier-series solution for the ATE is used in this paper. Simulation and experimental results given by manufacturers are presented and compared with each other to validate the modeling approach. Physics-based IGBT model is used which is proved accurate. |
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| Keywords: | insulated gate bipolar transistors physics-based model injection condition ambipolar transport equation |
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