首页 | 本学科首页   官方微博 | 高级检索  
     


Growth of LiNbO3 epitaxial films by oxygen radical-assisted laser molecular beam epitaxy
Authors:K. Matsubara   S. Niki   M. Watanabe   P. Fons   K. Iwata  A. Yamada
Affiliation:(1) Departament de F?sica Aplicada i Electromagnetisme, Dr. Moliner 50, Burjassot, 46100 Valencia, Spain;(2) Centre de Recherche sur l’H?t?ro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue B. Gr?gory, Sophia-Antipolis, 06560 Valbonne, France
Abstract:LiNbO3 films were epitaxially grown on c-sapphire substrates using oxygen radical-assisted laser molecular beam epitaxy (MBE). X-ray diffraction-based structural analysis showed that the films were epitaxial. Triple-axis rocking curve measurements of the LiNbO3 (0 0 0 6) reflection revealed that the film was highly c-oriented with an extremely narrow mosaic; the full width at half maximum of the LiNbO3 (0 0 0 6) rocking curve was 0.0036°, comparable to the value of high-quality bulk crystals. The surface of the film was very smooth, with a surface roughness r.m.s. value, measured by atomic force microscope, of 0.4 nm for a film of thickness 15 nm. The chemical composition of the film measured by X-ray photoelectron spectroscopy (XPS) was stoichiometric within the accuracy of XPS measurement.
Keywords:
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号