Growth of LiNbO3 epitaxial films by oxygen radical-assisted laser molecular beam epitaxy |
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Authors: | K. Matsubara S. Niki M. Watanabe P. Fons K. Iwata A. Yamada |
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Affiliation: | (1) Departament de F?sica Aplicada i Electromagnetisme, Dr. Moliner 50, Burjassot, 46100 Valencia, Spain;(2) Centre de Recherche sur l’H?t?ro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Rue B. Gr?gory, Sophia-Antipolis, 06560 Valbonne, France |
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Abstract: | LiNbO3 films were epitaxially grown on c-sapphire substrates using oxygen radical-assisted laser molecular beam epitaxy (MBE). X-ray diffraction-based structural analysis showed that the films were epitaxial. Triple-axis rocking curve measurements of the LiNbO3 (0 0 0 6) reflection revealed that the film was highly c-oriented with an extremely narrow mosaic; the full width at half maximum of the LiNbO3 (0 0 0 6) rocking curve was 0.0036°, comparable to the value of high-quality bulk crystals. The surface of the film was very smooth, with a surface roughness r.m.s. value, measured by atomic force microscope, of 0.4 nm for a film of thickness 15 nm. The chemical composition of the film measured by X-ray photoelectron spectroscopy (XPS) was stoichiometric within the accuracy of XPS measurement. |
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