Conduction studies on electrodeposited indium selenide thin films

Indium Selenide thin films were electrodeposited on Indium Tin Oxide (ITO) coated glass substrates from a mixture of Indium trichloride (InCl₃) and selenium dioxide (SeO₂) in aqueous solution by the potentiostatic electrodeposition technique. The InSe films showed that Mott’s variable-range hopping conductivity (VRH) is dominant under low field (∼2×10⁵ Vcm⁻¹) condition. At high field the Current-Voltage studies (in the temperature range 300 – 380 K) revealed that the conductivity of Indium selenide thin films is of Poole-Frenkel type. The plot drawn between Ln (I/V) and tV showed a straight line and also the experimental data and the theoretical data closely matches. Hence Poole-Frenkel mechanism is confirmed and discussed in detail. Paper presented at the 2nd International Conference on Ionic Devices, Anna University, Chennai, India, Nov. 28–30, 2003.