Theory of the de Haas-van Alphen effect in doped semiconductors

The field dependence of the magnetization in doped semiconductors of the type InSb, InAs, GaAs, etc. is studied in high magnetic fields. The standard theory of the de Haas-van Alphen effect, mostly applicable to metals, is modified to include the long-range fluctuations of charge carriers. The experimental investigation of this effect can shed light on some open questions in semiconductor physics, e.g., the problem of tails in the electronic density of states. It is shown that in such systems the mean magnetization is sensitive to magnetic interactions. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 3, 181–186 (10 February 1996) Published in English in the original Russian journal. Edited by Steve Torstveit.