Temperature-Dependent Electrical Conductance of Bi Nanowires |
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Authors: | Peng-cheng Huo Guang Tao Fei Yang Zhang Li-de Zhang |
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Institution: | Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China |
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Abstract: | The single crystal bismuth nanowire arrays grown along 0112] with the diameter of 30 nm was synthesized in the pore of anodic aluminum oxide templates through electrodeposi-tion process. The temperature dependent electric conductance of Bi nanowire arrays was measured from 78 K to 320 K. We found that the semimetal-to-semiconductor transition happened around 230 K for 30 nm Bi nanowires oriented along 01112] and the electric con-ductance of the nanowires had a strong temperature dependence. |
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Keywords: | Bismuth nanowire Semimetal-to-semiconductor transition Electric conduc-tance |
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